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| Preliminary SUF-4000 Product Description Sirenza Microdevices' SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.80 mm2 die. It is well-suited for RF, LO, and IF driver applications. Gain & Return Loss vs. Frequency (GSG Probe Data) 30 25 20 Gain (dB) GAIN 15 \ 10 ORL 5 0 0 3 6 9 12 15 Fre que ncy (Ghz) -25 -30 -20 -15 IRL 0 -5 -10 Return Loss (dB) 0.15-10 GHz, Cascadable pHEMT MMIC Amplifier Product Features * * * * * * * * Broadband Performance High Gain = 17.0 dB @ 2 GHz P1dB = 21 dBm @ 2 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Topology Applications * * * * * Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications Symbol Parameters Units Frequency Min. Typ. Max. Gp P1dB OIP3 NF IRL ORL Isol VD ID G/T Rth, j-l Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current Gain Variation vs. Temperature Thermal Resistance (junction-to-backside) dB dBm dBm dB dB dB dB V mA dB/C C/W 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 17.0 14.5 21.0 20.0 32.0 30.5 2.8 3.7 12.0 -11.5 -18.0 -20.0 -21.0 -20.0 5.0 73 0.01 164 Test Conditions: VS = 5.0V, ID = 73mA, = 5 V Tone Spacing==80 mA Typ. per tone OIP dBm Spacing = 1 MHz, Pout per tone = 0 dBm 1MHz, Pout = 0 Tone VS OIP3 ID Test Conditions: 3 ZS = ZL = 50 Ohms,L 25C, GSG Probe Data ZL = 50 Ohms T = 25C ZS = With Bias Tees Measured with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105418 Rev A Preliminary SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) S21 vs. Frequency 20 18 16 14 12 10 8 6 4 2 0 0 3 6 9 12 15 -20C 25C 85C 23 22 21 20 19 P1dB vs. Frequency dBm dB 18 17 16 15 14 13 0 1 2 3 4 5 6 7 8 9 10 25C -20C 85C Frequency (GHz) Frequency (GHz) S11 vs. Frequency 0 -5 -10 S22 vs. Frequency 0 -5 -10 dB dB -20C 25C 85C -15 -20 -25 -30 0 3 6 9 12 15 -15 -20 -25 -30 0 3 6 9 12 15 -20C 25C 85C Frequency (GHz) Frequency (GHz) OIP 3 vs. Frequency 35 7 6 Noise Figure vs. Fre que ncy 33 5 31 dBm 4 dB 3 29 25C -20C 2 1 0 25C -20C 85C 27 85C 25 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105418 Rev A Preliminary SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) Freq (GHz) 0.15 0.50 0.85 2.0 4.0 6.0 10.0 VD (V) 5 5 5 5 5 5 5 Current (mA) 73 73 73 73 73 73 73 Gain (dB) 17.0 17.0 17.0 17.0 16.0 14.5 11.0 P1dB (dBm) OIP3 (dBm) S11 (dB) -18.0 -19.5 -20.0 -18.5 -14.5 -11.5 -9.0 S22 (dB) -18.0 -19.5 -19.0 -18.5 -18.5 -20.0 -16.5 NF (dB) 21.0 21.0 20.5 20.0 32.5 32.0 31.0 30.5 2.8 2.8 3.3 3.7 4.7 Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Test Conditions: Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 80mA 5.5V 10dBm Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. 440mW 150C -40 to +85C -65 to 150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Backside of die Current Variation vs. Temperature Current vs. Voltage 80 75 70 ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. mA 65 60 55 50 4.75 -20C 25C 85C 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 VD 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105418 Rev A Preliminary SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier Pad Description 1 2 Pad # Function Description 1 2 Die Bottom This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy. Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold. Device Assembly +5V Interconnect Wire or Ribbon Choke 50 Line DC Block 50 Line DC Block 3-5 mil gap 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-105418 Rev A |
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